| Part Number | MMBT2222ALT1 Datasheet |
|---|---|
| Manufacturer | HAOHAI |
| Overview |
NPN, 600mA, 40V
NPN NPN Switching Transistor SMD
■Excellent hFE linearity ■Low noise ■Complementary to HMBT2907A ■Transistor Polarity: NPN ■Transistor pinout: BEC ■SOT-23 Package ■Marking.
PD
RΘJA Tj Tstg T/t
HMBT2222A 1P
Rating
75 40 6.0 600 225 1.8
300
Unit
V
mA mW mW/℃ mW
2.4
417 150 -55~+150 260/10
mW/℃ ℃/W
℃ ℃/S
HAOHAI ELECTRONICS CO., LTD.
1 4
kkg@kkg.com.cn HMBT2222A_SOT-23
NPN, 600mA, 40V
HMBT2222A
NPN-TRANSISTOR
* ELECTRICAL CHARACTERIST. |
MMBT2222ALT1 Datasheet and Specifications PDF
The MMBT2222ALT1 is a NPN Switching Transistor SMD.
| Part Number | MMBT2222ALT1 Datasheet |
|---|---|
| Description | NPN Silicon Transistors |
| Manufacturer | onsemi |
| Overview |
MMBT2222LT1, MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
•ăPb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collectorā.
*ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO Vdc MMBT2222LT1 30 MMBT2222ALT1 40 Collectorā-āBase Voltage VCBO Vdc MMBT2222LT1 60 MMBT2222ALT1 75 Emitterā-āBase Voltage VEBO Vdc MMBT2222LT1 5.0 MMBT2222ALT1 6.0 Co. |
| Part Number | MMBT2222ALT1 Datasheet |
|---|---|
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Manufacturer | TGS |
| Overview |
The MMBT2222ALT1 is designed for general purpose amplifier and high-speed switching, medium-power switching applications.
Features
• High frequency current gain. • High Speed Switching.
Absolute Max.
* High frequency current gain. * High Speed Switching. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature. |
| Part Number | MMBT2222ALT1 Datasheet |
|---|---|
| Description | General Purpose Transistors |
| Manufacturer | LRC |
| Overview |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3 COLLECTOR
1 BASE
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Vol.
eakdown Voltage
MMBT2222
(I C = 10 µAdc, I E = 0) Emitter *Base Breakdown Voltage MMBT2222A MMBT2222 (I E = 10 µAdc, I C = 0) Collector Cutoff Current MMBT2222A MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0) (V CB = 50 . |