| Part Number | MMBT2907AWT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
Order this document by MMBT2907AWT1/D
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifi.
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OFF CHARACTERISTICS
Collector * Emitter Breakdown Voltage(2) (IC = *10 mAdc, IB = 0) Collector * Base Breakdown Voltage (IC = *10 mAdc, IE = 0) Emitter * Base Breakdown Voltage (IE = *10 mAdc, IC = 0) Base Cutoff Current (VCE = *30 Vdc, VEB(off) = *0.5 Vdc) Collector Cutoff Current (VCE = *30 Vdc. |
MMBT2907AWT1 Datasheet PDF
The MMBT2907AWT1 is a General Purpose Transistor.
| Part Number | MMBT2907AWT1 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | onsemi |
| Overview |
MMBT2907AWT1
Preferred Device
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is d.
http://onsemi.com
COLLECTOR 3 1 BASE
* Pb *Free Package is Available MAXIMUM RATINGS Rating Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous Symbol VCEO VCBO VEBO IC Value *60 *60 *5.0 *600 Unit Vdc Vdc Vdc mAdc 2 EMITTER THERMAL CHARACTERIS. |