| Part Number | MMBT5401LT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5401LT1/D
High Voltage Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBT5401LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Col.
ollector * Emitter Breakdown Voltage (IC = *1.0 mAdc, IB = 0) Collector * Base Breakdown Voltage (IC = *100 mAdc, IE = 0) Emitter * Base Breakdown Voltage (IE = *10 mAdc, IC = 0) Collector Cutoff Current (VCB = *120 Vdc, IE = 0) (VCB = *120 Vdc, IE = 0, TA = 100°C) 1. FR * 5 = 1.0 0.75 2. Alumina = 0. |
MMBT5401LT1 Datasheet and Specifications PDF
The MMBT5401LT1 is a High Voltage Transistor.
| Part Number | MMBT5401LT1 Datasheet |
|---|---|
| Description | TRANSISTOR |
| Manufacturer | WEJ |
| Overview | RoHS MMBT5401LT1 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors Features DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V . DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V OOperating and storage junction temperature range CTj, Tstg : -55OC to +150OC 2.9 1.9 0.95 0.95 0.4 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR IC Unit:mm NElectrical Cha. |
| Part Number | MMBT5401LT1 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | TGS |
| Overview |
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMB.
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) * Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature. |