MMBTSC3875 Datasheet and Specifications PDF

The MMBTSC3875 is a NPN Silicon Epitaxial Planar Transistor.

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Part NumberMMBTSC3875 Datasheet
ManufacturerBluecolour
Overview MMBTSC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.. µA at VCE=10V, IC=1mA Collector Output Capacitance fT 80 - - MHz at VCB=10V, f=1MHz COB - 2 3.5 pF Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ NF - 1 10 dB Page 2 of 4 6/9/2011 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VCE(sat) (V) I C-VCE 280 240 200 160 120 80 40.
Part NumberMMBTSC3875 Datasheet
DescriptionNPN Silicon Epitaxial Planar Transistor
ManufacturerPACO
Overview MMBTSC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. SOT-23 P. C=1mA Collector Output Capacitance fT 80 - - MHz at VCB=10V, f=1MHz COB - 2 3.5 pF Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ NF - 1 10 dB Dated : 20/10/2005 MMBTSC3875 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VCE(sat) (V) I C-VCE 280 240 200 160 120 80 40 0 0 6..