| Part Number | MMFT2N25E Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMFT2N25E
Product Preview High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficie.
1AA
3
2,4 D
1 G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain *to *Source Voltage VDSS Drain *to *Gate Voltage, RGS = 1.0 mW Gate *to *Source Voltage * Continuous VDGR VGS Gate *to *Source Voltage * Single Pulse (tp ≤ 50 mS) VGSM Drain Current * Continuous @ TC = 25°C D. |
MMFT2N25E Datasheet and Specifications PDF
The MMFT2N25E is a High Energy Power FET.
Key Specifications
| Part Number | MMFT2N25E Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT2N25E/D
Product Preview
TMOS E-FET™ High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E.
25°C unless otherwise noted)
Rating Drain *to *Source Voltage Drain *to *Gate Voltage, RGS = 1.0 mW Gate *to *Source Voltage * Continuous Gate *to *Source Voltage * Single Pulse (tp ≤ 50 mS) Drain Current * Continuous @ TC = 25°C Drain Current * Continuous @ TC = 100°C Drain Current * Single Pulse (tp ≤ 10 . |