MMFT2N25E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N25E/D Product Preview TMOS E-FET™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed...