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MMFT2N25E - High Energy Power FET

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Datasheet Details

Part number MMFT2N25E
Manufacturer onsemi
File Size 146.47 KB
Description High Energy Power FET
Datasheet download datasheet MMFT2N25E Datasheet

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MMFT2N25E Product Preview High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.