| Part Number | MMFT960T1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMFT960T1
Preferred Device
Power MOSFET 300 mA, 60 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc conv.
IAGRAM
THERMAL CHARACTERISTICS
Thermal Resistance * Junction *to *Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 2 3 TO *261AA CASE 318E STYLE 3 FT960 LWW L WW = Location Code = Work Week 1. Device mounted on a FR *4 glass epoxy printed circu. |
MMFT960T1 Datasheet and Specifications PDF
The MMFT960T1 is a Power MOSFET 300 mA / 60 Volts.
Key Specifications
| Package | SOT-223-4 |
|---|---|
| Pins | 4 |
| Height | 1.65 mm |
| Length | 6.7 mm |
| Width | 3.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | MMFT960T1 Datasheet |
|---|---|
| Description | MEDIUM POWER FET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT960T1/D
Medium Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount
This TMOS medium.
2 3
CASE 318E *04, STYLE 3 TO *261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain *to *Source Voltage Gate *to *Source Voltage * Non *Repetitive Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg. |