MOC8106M Datasheet
MOC8106M Datasheet (onsemi)
onsemi
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features High BVCEO: 70 V Minimum (CN.
* High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M)
* Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit
*to
*Unit Variation
* Current Transfer Ratio In Select Groups
* Very Low Coupled Capacitance Along With
No Chip
*to
*Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MO.
MOC8106M Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. ■ ■ ■ ■ – Add option V (e.g., CNY17F2VM) – File #102497 C.
* UL recognized (File # E90700, Vol. 2)
* VDE recognized
Description
The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.
*
*
*
*
* Add option V (e.g., CNY17F2VM)
* File #102497 Current transfer ratio in selec.