| Part Number | MPSA44 Datasheet |
|---|---|
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES ᴌHigh Breakdown Voltage. ᴌCollector Power Dissipation : PC=625mW. B MPSA44/45 EPITAXIAL PLANAR NPN TRANSISTOR C A N K E G MAXIMUM R. ᴌHigh Breakdown Voltage. ᴌCollector Power Dissipation : PC=625mW. B MPSA44/45 EPITAXIAL PLANAR NPN TRANSISTOR C A N K E G MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperatu. |
MPSA44 Datasheet and Specifications PDF
The MPSA44 is a EPITAXIAL PLANAR NPN TRANSISTOR.
| Part Number | MPSA44 Datasheet |
|---|---|
| Description | High-Voltage NPN Transistors |
| Manufacturer | Weitron Technology |
| Overview | MPSA44 High-Voltage NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Col. racteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) (IC= 10 mAdc, VCE= 10Vdc) (IC= 100 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) (IC= 50 mAdc, IB= 5.0 mAdc) Base-Emitter Saturation Voltage (IC= 10 mAdc, I. |
| Part Number | MPSA44 Datasheet |
|---|---|
| Description | NPN TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
UNISONIC TECHNOLOGIES CO., LTD
MPSA44/45
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
* Collector-Emitter Voltage: * VCEO=400V (UTC MPSA44) * VCEO=350V (UTC MPSA45) * Collector Curren.
* Collector-Emitter Voltage: * VCEO=400V (UTC MPSA44) * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA
1 SOT-89
1 TO-252
1 TO-92
1 TO-92NL
1 TO-126
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MPSA44L-AB3-R MPSA44G-AB3-R SOT-89 MPSA44L-AN3-R MPSA44G-TN. |
| Part Number | MPSA44 Datasheet |
|---|---|
| Description | High Voltage Transistor |
| Manufacturer | Multicomp |
| Overview |
MPSA44
High Voltage Transistor
Features:
• Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes.
• NPN epita.
* Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. * NPN epitaxial planar silicon transistor. * Designed for General Purpose Applications Requiring High Breakdown Voltages, Low Saturation Voltages and L. |