MPSH10 Datasheet and Specifications PDF

The MPSH10 is a NPN Transistor.

Key Specifications

PackageTO-92
Mount TypeThrough Hole
Pins3
Max Frequency650 MHz
Height5.33 mm
Length6.35 mm
Width6.35 mm
Max Operating Temp150 °C
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Part NumberMPSH10 Datasheet
Manufactureronsemi
Overview MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage .
* Pb
*Free Packages are Available* MAXIMUM RATINGS Rating Collector
* Emitter Voltage Collector
* Base Voltage Emitter
* Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol .
Part NumberMPSH10 Datasheet
DescriptionNPN RF TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applica. .
Part NumberMPSH10 Datasheet
Description(MPSH10 / MPSH11) VHF/UHF Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors Order this document by MPSH10/D NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MPSH10 MPSH11 Motorola Preferred Devices MAXIMUM RATINGS Rating . 0) Emitter
* Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0
*
*
*
*
* 100 100 Vdc Vdc Vdc nAdc nAdc Preferred devices are Motorola recommended choices for fu.
Part NumberMPSH10 Datasheet
DescriptionNPN RF Transistor
ManufacturerFairchild Semiconductor
Overview MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with c. ycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH10 350 2.8 125 357 Max *MMBTH10 225 1.8 556 Units mW mW/ °C °C.

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