| Part Number | MSB709-RT1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MSB709-RT1
Preferred Device
PNP General Purpose Amplifier Transistor Surface Mount
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector C.
ltage (IC = *100 mAdc, IB = *10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min *45 *60 *7.0 * * 210 * Max * * * *0.1 *100 340 *0.5 Unit Vdc SC *59 SUFFIX CASE 318D MARKING DIAGRAM Vdc Vdc AR M mAdc nAdc * Vdc Preferred devices are recommended choices for future use and best ove. |
MSB709-RT1 Datasheet PDF
The MSB709-RT1 is a Small Signal Plastic Pnp.
| Part Number | MSB709-RT1 Datasheet |
|---|---|
| Description | PNP General Purpose Amplifier Transistor Surface Mount |
| Manufacturer | LRC |
| Overview | LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount COLLECTOR 3 MSB709-RT1 3 2 BASE 1 EMITTER MAXIMUM RATINGS (T A = 25 °C) Rating Symbol Value Unit Collector-Ba. . |
| Part Number | MSB709-RT1 Datasheet |
|---|---|
| Description | Small Signal Plastic Pnp |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSB709–RT1/D
PNP General Purpose Amplifier Transistor Surface Mount
COLLECTOR 3
MSB709-RT1
Motorola Preferred Device
3 2 1
2 BASE
1 .
*10 Vdc, IB = 0) DC Current Gain(1) (VCE = *10 Vdc, IC = * 2.0 mAdc) Collector *Emitter Saturation Voltage (IC = *100 mAdc, IB = *10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min * 45 * 60 * 7.0 * * 210 * Max * * * * 0.1 *100 340 *. |