MTB1306 Datasheet and Specifications PDF

MTB1306 Preferred Device Power MOSFET 75 Amps, 30 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficie.

in
*to
*Source Voltage Drain
*to
*Gate Voltage (RGS = 1.0 MΩ) Gate
*to
*Source Voltage
* Continuous
* Non
*Repetitive (tp ≤ 10 ms) Drain Current
* Continuous
* Continuous @ 100°C
* Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) VDSS VDGR V.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1306/D Advance Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The.

ecified
* Source
*to
*Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
* Short Heatsink Tab Manufactured
* Not Sheared
* Specially Designed Leadframe for Maximum Power Dissipa.