MTB16N25E Datasheet and Specifications PDF

The MTB16N25E is a High Energy Power FET.

Key Specifications

Pins3
Max Operating Temp150 °C
🏠
Part NumberMTB16N25E Datasheet
Manufactureronsemi
Overview MTB16N25E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D2PAK package has the capability of housing a larger die than an. de
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
* Short Heatsink Tab Manufactured
* Not Sheared
* Specially Designed Leadframe for Maximum Power Dissipation
* Available in 24 mm 13
*inch/800 Unit Tape & Reel, Add
*T4 Suffix to Part Number h.
Part NumberMTB16N25E Datasheet
DescriptionTMOS POWER FET
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB16N25E Motorola Preferred Device N–C. alanche Energy Specified
* Source
*to
*Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
* Short Heatsink Tab Manufactured
* Not Sheared
* Specially Designed Leadframe for Maxi.

Price & Availability

Seller Inventory Price Breaks Buy
Verical 155100 392+ : 0.9575 USD
500+ : 0.8618 USD
1000+ : 0.7948 USD
10000+ : 0.7085 USD		 View Offer
Verical 29600 392+ : 0.9575 USD
500+ : 0.8618 USD
1000+ : 0.7948 USD
10000+ : 0.7085 USD		 View Offer
Rochester Electronics 184700 100+ : 0.766 USD
500+ : 0.6894 USD
1000+ : 0.6358 USD
10000+ : 0.5668 USD		 View Offer

Similar Datasheets

Part Number Manufacturer Description
16N25E Motorola Semiconductor MTB16N25E