| Part Number | MTB50N06V |
|---|---|
| Manufacturer | onsemi |
| Overview |
MTB50N06V
Preferred Device
Power MOSFET 42 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high .
IDM PD
60 Vdc 60 Vdc
± 20 ± 25
42 30 147
125 0.83 3.0
Vdc Vpk Adc
Apk Watts W/°C Watts
Operating and Storage Temperature Range
TJ, Tstg
* 55 to 175 °C Single Pulse Drain *to *Source Avalanche Energy * Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 42 Apk, L = 0.454 μH, RG = 25 Ω) EAS . |
MTB50N06V Datasheet
The MTB50N06V is a Power MOSFET.
| Part Number | MTB50N06V |
|---|---|
| Description | TMOS POWER FET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB50N06V/D
TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on–r.
of TMOS V * On *resistance Area Product about One *half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology * Faster Switching than E *FET Predecessors ™ Data Sheet V™ MTB50N06V Motorola Preferred Device N *Channel Enhancement *Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RD. |