MTB6N60E1 Datasheet and Specifications PDF

MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the av.

tion TMOS POWER FET 6.0 AMPERES, 600 VOLTS RDS(on) = 1.2 W D2PAK
*SL CASE 418C
*01 Style 2 D ®G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
*to
*Source Voltage Drain
*to
*Gate Voltage (RGS = 1.0 MΩ) Gate
*Source Voltage
* Continuous Gate
*Source Voltage
* Non
*Repetitive (tp ≤ 10 ms) Dr.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This adva.

eared
* Specially Designed Leadframe for Maximum Power Dissipation D MTB6N60E1 Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHM ® G CASE 418C
*01, Style 2 D2PAK
*SL S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
*to
*Source Voltage Drain
*to
*Gate Vo.