Part Number	MTB9N25E Datasheet
Manufacturer	onsemi
Overview	MTB9N25E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any. e to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature * Short Heatsink Tab Manufactured * Not Sheared * Specially Designed Leadframe for Maximum Power Dissipation TMOS POWER FET 9.0 AMPERES, 250.