MTD9N10E Datasheet and Specifications PDF

MTD9N10E Preferred Device Power MOSFET 9 Amps, 100 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient.

itive (tp ≤ 10 ms) Drain Current
* Continuous Drain Current
* Continuous @ 100°C Drain Current
* Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size VDSS VDGR VGS VGSM ID ID IDM PD 100 100 ± 20 ± 30 9.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mod.

2500 Unit Tape & Reel, Add T4 Suffix to Part Number
* Replaces MTD6N10 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
*Source Voltage Drain
*Gate Voltage (RGS = 1.0 MΩ) Gate
*Source Voltage
* Continuous Gate
*Source Voltage
* Non
*Repetitive (tp ≤ 10 ms) Drain Current
* Continuous Drain .