| Part Number | MTP1N100E Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MTP1N100E
Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect
Transistor
High−Performance Silicon−Gate CMOS
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage.
VDS(on) Specified at Elevated Temperature
TMOS POWER FET 1.0 AMPERES, 1000 VOLTS
RDS(on) = 9.0 W
TO *220AB CASE 221A *06 Style 5 D ®G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value S Unit Drain *Source Voltage Drain *Gate Voltage (RGS = 1.0 MΩ) Gate *Sour. |
MTP1N100E Datasheet and Specifications PDF
The MTP1N100E is a Power Field Effect Transistor.
| Part Number | MTP1N100E Datasheet |
|---|---|
| Description | TMOS POWER FET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP1N100E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP1N100E
Motorola Preferred Device
N–Channel Enhanceme.
e Comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM ® D CASE 221A *06, Style 5 TO *220AB MAXIMUM RATINGS (TC = 25°C unless otherwise note. |