MTP3N50E Datasheet and Specifications PDF

MTP3N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche m.

3.0 AMPERES, 500 VOLTS RDS(on) = 3.0 W TO
*220AB CASE 221A
*06 Style 5 D ®G S © Semiconductor Components Industries, LLC, 2006 1 August, 2006
* Rev. 2 Publication Order Number: MTP3N50E/D MTP3N50E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain
*Source Volta.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motorola Preferred Device N–Channel Enhancement–Mode Si.

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*Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS ® D G S CASE 221A
*06, Style 5 TO
*220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
*Source Voltage Drain
*Gate Voltage (RGS = 1.0 MΩ) Gate
*Source Vol.

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.

*With TO-220 packaging
*High speed switching
*Very high commutation ruggedness
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*PFC stages
*Popular AC-DC applications
*Power supply
*Switching applications INCHANGE.