MTP3N50E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time....