MTP3N50E Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.

Datasheet Details

Part number	MTP3N50E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	251.88 KB
Description	TMOS POWER FET
Datasheet	MTP3N50E_Motorola.pdf

Device stresses increase with commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain.
to.
source voltage that the device must sustain during commutation; IFM is the maximum forward source-drai.

Brand Logo	Part Number	Description	Manufacturer
	MTP3N50E	TMOS E-FET	ON Semiconductor
	MTP3N50E	N-Channel MOSFET	INCHANGE

Part Number	Description
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MTP3N100	Power MOSFET
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MTP3N120E	TMOS POWER FET 3.0 AMPERES 1000 VOLTS
MTP3N25E	TMOS POWER FET 3.0 AMPERES 250 VOLTS
MTP3N60	Power Field Effect Transistor
MTP3N75	Power Field Effect Transistor
MTP3N80	Power Field Effect Transistor
MTP3N95	Power MOSFET