MTP3N50E
MTP3N50E is TMOS POWER FET manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP3N50E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET
Designer's
Motorola Preferred Device
N- Channel Enhancement- Mode Silicon Gate
This advanced high voltage TMOS E- FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain- to- source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety...
