| Part Number | NCE01H16 Datasheet |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| Overview |
The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Pb Free Product
NCE01H16
General Features.
* VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ) * High density cell design for ultra low Rdson * Fully characterized avalanche voltage and current * Good stability and uniformity with high EAS * Excellent package for good heat dissipation * Special process technology for high ESD capabil. |
NCE01H16 Datasheet and Specifications PDF
The NCE01H16 is a N-Channel Enhancement Mode Power MOSFET.
| Part Number | NCE01H16 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
NCE01H16-VB
NCE01H16-VB Datasheet N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration
100 0.0030
180 Single
FEATURES • TrenchFET® .
* TrenchFET® Power MOSFET * Package with Low Thermal Resistance * AEC-Q101 Qualifiedd * 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Cont. |