NCE01H16 - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
Package with Low Thermal Resistance.
AEC-Q101 Qualifiedd.
100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET.

NCE01H16 n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	NCE01H16
Manufacturer	VBsemi
File Size	256.82 KB
Description	N-Channel MOSFET
Datasheet	NCE01H16 Datasheet

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NCE01H16-VB NCE01H16-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.0030 180 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.