Part NCE01H13WD
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 309.42 KB
NCE Power Semiconductor

NCE01H13WD Overview

Description

The NCE01H13WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability