The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
| Part number | NCE01H16 |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 324.71 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE01H16 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| NCE01H16 | N-Channel MOSFET | VBsemi |
| NCE0103 | N-Channel 100V MOSFET | VBsemi |
| NCE0157A2 | N-Channel Power MOSFET | VBsemi |
| NCE02H10T | N-Channel Enhancement Mode Power MOSFET | H&M Semiconductor |
| NCE1520 | N-Channel 150-V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| NCE01H10 | N-Channel Enhancement Mode Power MOSFET |
| NCE01H10D | N-Channel Enhancement Mode Power MOSFET |
| NCE01H11 | N-Channel Enhancement Mode Power MOSFET |
| NCE01H13 | N-Channel Enhancement Mode Power MOSFET |
| NCE01H13D | N-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
