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NCE01H10D - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE01H10D
Manufacturer NCE Power Semiconductor
File Size 316.92 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01H10D Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE01H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.