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NCE01H10 - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE01H10 N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE01H10

Datasheet Details

Part number	NCE01H10
Manufacturer	NCE Power Semiconductor
File Size	338.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01H10 Datasheet
Additional preview pages of the NCE01H10 datasheet.

Product details

Description

The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 6, 2015 |