Datasheet Summary
http://.ncepower.
Pb Free Product
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V
(Typ:9.9mΩ)
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
-...