Datasheet Summary
http://.ncepower.
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Pb Free Product
General Features
- VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V
(Typ:5.3mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
-...