| Part Number | NDT454P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | Features Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is . Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices . |
NDT454P Datasheet and Specifications PDF
The NDT454P is a P-Channel Enhancement Mode Field Effect Transistor.
Key Specifications
| Package | SOT-223 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Height | 1.8 mm |
| Length | 6.7 mm |
| Width | 3.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | NDT454P Datasheet |
|---|---|
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore. -5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.07Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________. |