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NDT454P - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • -5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.07Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C u.

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Datasheet Details

Part number NDT454P
Manufacturer Fairchild
File Size 92.24 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDT454P Datasheet
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Full PDF Text Transcription

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June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.07Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON).
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