Datasheet Details
| Part number | NDT456P |
|---|---|
| Manufacturer | UMW |
| File Size | 227.72 KB |
| Description | -30V P-ChanneI MOSFET |
| Datasheet | NDT456P-UMW.pdf |
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Overview: UMW NDT456P -30V P-ChanneI MOSFET 1.
| Part number | NDT456P |
|---|---|
| Manufacturer | UMW |
| File Size | 227.72 KB |
| Description | -30V P-ChanneI MOSFET |
| Datasheet | NDT456P-UMW.pdf |
|
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Power SOT-223 P-Channel enhancement mode power field effect transistors especially tailored to minimize on state resistance and provide superior switching performance.
2.2Features High power and current handling capability in a widely used surface mount package.
2.1Features VDS (V)=-30V ID=-7.5A RDS(ON)<25mΩ(VGS=-10V) RDS(ON)<30mΩ(VGS=-4.5V) High density cell design for extremely low RDS(ON) 3.Pinning information Pin Symbol Description 1 G GATE 2 D DRAIN 3 S SOURCE SOT-223 top view G D S 4.Absolute Maximum Ratings TA= 25°C Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous -Pulsed Power Dissipation for Single Operation Storage Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1c) Symbol VDSS VGSS ID PD TJ, TSTG Rating -30 ±20 -7.5 ±20 3 1.3 1.1 -65 to 150 Units V V A A W W W °C UTD Semiconductor Co.,Limited .umw-ic.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
NDT456P | P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
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NDT456P | 35V P-ChanneI MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| NDT452AP | -30V P-ChanneI MOSFET |