NDT451N - 30V N-Channel MOSFET

VBsemi

Key Features

Trench Power MOSFET.
100 % Rg and UIS Tested D SOT-223 D S D G G S N-Channel MOSFET www. VBsemi. com.

NDT451N 30v n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	NDT451N
Manufacturer	VBsemi
File Size	232.19 KB
Description	30V N-Channel MOSFET
Datasheet	NDT451N Datasheet

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NDT451N-VB PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration NDT451N-VB Datasheet N-Channel 30 V (D-S) MOSFET 30 0.019 0.021 7 Single FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested D SOT-223 D S D G G S N-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 7 4.5 5 31 10 5 4 1.