| Part Number | NDT451N Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
NDT451N-VB
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
NDT451N-VB Datasheet N-Channel 30 V (D-S) MOSFET
30 0.019 0.021
7 Single
FEATURES • Tren.
* Trench Power MOSFET * 100 % Rg and UIS Tested D SOT-223 D S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Conti. |
NDT451N Datasheet and Specifications PDF
The NDT451N is a 30V N-Channel MOSFET.
Key Specifications
| Package | SOT-223 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | NDT451N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore. 5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________________________ D D G D S . |