NDT451AN Overview
Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V
- High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
- ________________________________________________________________________________ D D G D S G S
