NDT452AP - P-Channel MOSFET

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Fairchild

Part number	NDT452AP
Manufacturer	Fairchild
File Size	92.95 KB
Description	P-Channel MOSFET
Datasheet	NDT452AP Datasheet
Additional preview pages of the NDT452AP datasheet.

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD Maximum Power Dissipation T A = 25°C unless otherwise.

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Published: May 12, 2005 |