| Part Number | NDT452AP Datasheet |
|---|---|
| Manufacturer | UMW |
| Overview | Power SOT-223 P-Channel enhancement mode power field effect transistors especially tailored to minimize on state resistance and provide superior switching performance. 2.Features VDS (V)=-30V ID=-5A . VDS (V)=-30V ID=-5A RDS(ON)<65mΩ(VGS=-10V) RDS(ON)<100mΩ(VGS=-4.5V) High power and current handling capability in a widely used surface mount package. High density cell design for extremely low RDS(ON) 3.Pinning information Pin Symbol Description 1 G GATE 2,4 D DRAIN 3 S SOURCE SOT-223. |
NDT452AP Datasheet and Specifications PDF
The NDT452AP is a -30V P-ChanneI MOSFET.
Key Specifications
| Package | SOT-223 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Height | 1.8 mm |
| Width | 6.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | NDT452AP Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore. -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D G D . |