Datasheet4U Logo Datasheet4U.com

NDT452P - P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise no.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDT452P 35V P-ChanneI MOSFET VBsemi
NDT452AP -30V P-ChanneI MOSFET UMW
NDT451N 30V N-Channel MOSFET VBsemi
NDT454P P-Channel Enhancement Mode Field Effect Transistor onsemi
NDT456P 35V P-ChanneI MOSFET VBsemi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
NDT452AP P-Channel MOSFET
NDT451AN N-Channel MOSFET
NDT451N N-Channel MOSFET
NDT453N N-Channel Enhancement Mode Field Effect Transistor
NDT454P P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. Features -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.