NDT455N
Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Key Features
- RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.02 Ω @ VGS = 4.5 V
- High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
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