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NDT456P Datasheet P-channel Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: December 1998 NDT456P P-Channel Enhancement Mode Field Effect.

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook puter power management, battery powered circuits, and DC motor control.

Key Features

  • -7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDT456P Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulse.

Similar Datasheet

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