NDT456P Datasheet and Specifications PDF

The NDT456P is a -30V P-ChanneI MOSFET.

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Part NumberNDT456P Datasheet
ManufacturerUMW
Overview Power SOT-223 P-Channel enhancement mode power field effect transistors especially tailored to minimize on state resistance and provide superior switching performance. 2.2Features High power and curre. High power and current handling capability in a widely used surface mount package. 2.1Features VDS (V)=-30V ID=-7.5A RDS(ON)<25mΩ(VGS=-10V) RDS(ON)<30mΩ(VGS=-4.5V) High density cell design for extremely low RDS(ON) 3.Pinning information Pin Symbol Description 1 G GATE 2 D DRAIN 3 S SOUR.
Part NumberNDT456P Datasheet
Description35V P-ChanneI MOSFET
ManufacturerVBsemi
Overview NDT456P-VB NDT456P-VB Datasheet P-Channel 35 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 35 RDS(on) () 0.040 at VGS = - 10 V 0.048 at VGS = - 4.5 V ID (A)d - 6.2 - 5.1 Qg (Typ.) 9..
* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Load Switches, Adaptor Switch - Notebook PCs ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Dra.
Part NumberNDT456P Datasheet
DescriptionP-Channel Enhancement Mode Field Effect Transistor
ManufacturerFairchild Semiconductor
Overview Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore. -7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D .