| Part Number | NDT452P Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
NDT452P-VB
NDT452P-VB Datasheet P-Channel 35 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 35
RDS(on) () 0.040 at VGS = - 10 V 0.048 at VGS = - 4.5 V
ID (A)d - 6.2 - 5.1
Qg (Typ.) 9..
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg Tested * 100 % UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Load Switches, Adaptor Switch - Notebook PCs ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Dra. |
NDT452P Datasheet and Specifications PDF
The NDT452P is a 35V P-ChanneI MOSFET.
Key Specifications
| Package | TO-261-4 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | NDT452P Datasheet |
|---|---|
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore. -3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________________________ D D G D S. |