NJD1718 Datasheet

The NJD1718 is a Power Transistors.

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Part NumberNJD1718
Manufactureronsemi
Overview NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • Low Collector−Emitter Saturat.
* Low Collector
*Emitter Saturation Voltage
* High Switching Speed
* Epoxy Meets UL 94 V
*0 @ 0.125 in
* NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
*Q101 Qualified and PPAP Capable
* These Devices are Pb
*Free, Halogen Free/BFR Free and ar.
Part NumberNJD1718
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI. emark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.05A VBE(sat) Base-Emitter Saturation Vo.