The NP83P06PDG is a MOS FIELD EFFECT TRANSISTOR.
| Package | TO-263 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.65 mm |
| Length | 10 mm |
| Width | 9 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | NP83P06PDG Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. * Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = *10 V, ID = *41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = *4.5 V, ID = *41.5 A) * High current rating: ID(DC) = m83 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cur. |
| Part Number | NP83P06PDG Datasheet |
|---|---|
| Description | P-channel Power MOSFET |
| Manufacturer | Renesas |
| Overview |
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) R.
* Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A ) * Low input capacitance : Ciss = 10100 pF Typ. * Designed for automotive application and AEC-Q101 qualified. * Pb-free (This product does not contain Pb in the ex. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Renesas | 1949 | 1+ : 4.68 USD 10+ : 3.097 USD 100+ : 2.1978 USD 800+ : 1.72834 USD |
View Offer |
| DigiKey | 1949 | 1+ : 4.68 USD 10+ : 3.097 USD 100+ : 2.1978 USD |
View Offer |
| DigiKey | 1949 | 1+ : 4.68 USD 10+ : 3.097 USD 100+ : 2.1978 USD |
View Offer |