NP83P06PDG Datasheet MOS FIELD EFFECT TRANSISTOR

Manufacturer: NEC (now Renesas Electronics)

Overview: www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P06PDG SWITCHING P-CHANNEL POWER.

NP83P06PDG mos field effect transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	NP83P06PDG
Manufacturer	NEC (now Renesas Electronics)
File Size	209.98 KB
Description	MOS FIELD EFFECT TRANSISTOR
Download	NP83P06PDG Download (PDF)

General Description

The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION PART NUMBER NP83P06PDG-E1-AY NP83P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.)

Key Features

Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS =.
10 V, ID =.
41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS =.
4.5 V, ID =.
41.5 A).
High current rating: ID(DC) = m83 A (TO-263).

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	NP83P06PDG	P-channel Power MOSFET	Renesas

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