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NP83P06PDG - MOS FIELD EFFECT TRANSISTOR

Description

The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 41.5 A).
  • High current rating: ID(DC) = m83 A (TO-263).

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Datasheet Details

Part number NP83P06PDG
Manufacturer NEC
File Size 209.98 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP83P06PDG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP83P06PDG-E1-AY NP83P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.
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