| Part Number | NVD5C648NL Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
NVD5C648NL
MOSFET – Power, Single N-Channel
60 V, 4.1 mW, 89 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP C.
* Low RDS(on) to Minimize Conduction Losses * Low QG and Capacitance to Minimize Driver Losses * AEC *Q101 Qualified and PPAP Capable * These Devices are Pb *Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain *to *S. |
NVD5C648NL Datasheet and Specifications PDF
The NVD5C648NL is a Power MOSFET.
| Part Number | NVD5C648NL Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
NVD5C648NL
FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage-
VDSS= 60V(Min) ·Static Drain-Source On-Resistance
RDS(on) :4.1mΩ(Max) ·100% avalanche teste.
*Drain Current *ID= 89A@ TC=25℃ *Drain Source Voltage- VDSS= 60V(Min) *Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VD. |