NVD5C648NL - N-Channel MOSFET

Datasheet Summary

Features

Drain Current.
ID= 89A@ TC=25℃.
Drain Source Voltage- VDSS= 60V(Min).
Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	NVD5C648NL
Manufacturer	INCHANGE
File Size	260.88 KB
Description	N-Channel MOSFET
Datasheet	NVD5C648NL Datasheet
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isc N-Channel MOSFET Transistor NVD5C648NL FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage- VDSS= 60V(Min) ·Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 89 A IDM Drain Current-Single Pluse 510 A PD Total Dissipation @TC=25℃ 72 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.07 ℃/W isc website：www.iscsemi.

Published: May 15, 2021 |