The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NVD5C648NL
MOSFET – Power, Single N-Channel
60 V, 4.1 mW, 89 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
TC = 25°C
ID
rent RqJC (Notes 1 & 3) Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
PD
(Note 1)
TC = 100°C
89
A
63
72
W
36
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 2 &
3)
Steady TA = 100°C
Power Dissipation RqJA State TA = 25°C
PD
(Notes 1 & 2)
TA = 100°C
18
A
13
3.1
W
1.
NVD5C648NL Datasheet
