NVD5C648NL Description
NVD5C648NL MOSFET Power, Single N-Channel 60 V, 4.1 mW, 89.
NVD5C648NL Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 55 to °C 175
- Steady State (Note 2) RqJA
- Rev. 0