P0660ETFS Datasheet
P0660ETFS Datasheet (UNIKC)
UNIKC
P0660ETF / P0660ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.3Ω @VGS = 10V 6A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted.
ISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 600 2 3 4 ±100 Gate Volta.
P0660ETFS Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0660ETF:TO-220F P0660ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω ID 6A D G S ABSOLUTE MAXI.
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