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P0903BDG Datasheet

The P0903BDG is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberP0903BDG
ManufacturerUNIKC
Overview P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5mΩ @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO. UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA 25 VDS = VGS, ID = 250mA 1 VDS = 0V, VGS = ±25V VDS =20V, VGS = 0V VDS =20V, VGS = 0V, TJ = 125°C V 1.6 3 ±100 n.
Part NumberP0903BDG
DescriptionN-Channel MOSFET
ManufacturerNiko
Overview NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.5m ID 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE . CTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = .

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