P1060ETF Datasheet and Specifications PDF

P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.77Ω @VGS = 10V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Not.

°C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs .

NIKO-SEM N-ChFainenldelEEffnehcatnTcreamnseinsttoMrodeHaPPlo11g00e66n00-FEErTTeFFe:S&T:OTLOe-2a-22d02-FF0rFeSe PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω ID 10A D G S ABSOLUTE MAXIMUM RATIN.

= 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V REV 1.0 1 MIN LIMITS TYP MAX UNIT 600 V 2 2.9 4 ±100 nA F.